US Patent Issued to Taiwan Semiconductor Manufacturing on March 4 for "Diffusion barrier layer in programmable metallization cell" (Taiwanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,245,529, issued on March 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Diffusion barrier layer in programmable metallization cell" was invented by Albert Zhong (Taichung, Taiwan), Cheng-Yuan Tsai (Chu-Pei, Taiwan), Hai-Dang Trinh (Hsinchu, Taiwan) and Shing-Chyang Pan (Jhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to a method for forming an integrated chip. The method includes forming a bottom electrode over a substrate. A data storage layer is formed on the bottom electrode. A diffusion barrier layer is formed over the data storage layer. The diffusion barrier layer ...