US Patent Issued to Taiwan Semiconductor Manufacturing on March 25 for "Techniques for MRAM MTJ top electrode connection" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,643, issued on March 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Techniques for MRAM MTJ top electrode connection" was invented by Harry-Hak-Lay Chuang (Zhubei, Taiwan), Chern-Yow Hsu (Chu-Bei, Taiwan) and Shih-Chang Liu (Alian Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to an integrated circuit including a semiconductor substrate and an interconnect structure disposed over the semiconductor substrate. The interconnect structure includes a plurality of dielectric layers and a plurality of metal layers that are stacked over one another in alternating fashion. The plu...