US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 25 for "Structure and method for a low-k dielectric with pillar-type air-gaps" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,121, issued on March 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Structure and method for a low-k dielectric with pillar-type air-gaps" was invented by Chih Wei Lu (Hsinchu, Taiwan), Chung-Ju Lee (Hsinchu, Taiwan) and Tien-I Bao (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit device having an interlayer dielectric with pillar-type air gaps and a method of forming the circuit device are disclosed. In an exemplary embodiment, the method comprises receiving a substrate and depositing a first layer over the substrate. A copolymer layer that includes a first constituent polymer and a ...