US Patent Issued to Taiwan Semiconductor Manufacturing on March 25 for "Semiconductor structure and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,222, issued on March 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure and manufacturing method thereof" was invented by Neil Quinn Murray (Hsinchu, Taiwan), Katherine H. Chiang (New Taipei, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a method of manufacturing a semiconductor structure. The method may be performed by forming a first source/drain region. A first dielectric layer is formed above the first source/drain region. A portion of the first dielectric layer is removed. A channel region is formed along a sidew...