ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,540, issued on March 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor memory devices and methods of manufacturing thereof" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Chia-En Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including, in a first area, a first semiconductor channel coupled to a portion of a first memory layer, and first, second, and third conductive structures. The first and third conductive structures are coupled to end portions of a sidewall of the first semiconductor channel, with the second conductive stru...