US Patent Issued to Taiwan Semiconductor Manufacturing on March 25 for "Semiconductor devices with a nitrided capping layer" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,082, issued on March 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices with a nitrided capping layer" was invented by Po-Chin Chang (Taichung, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Shuen-Shin Liang (Hsinchu, Taiwan), Sheng-Tsung Wang (Hsinchu, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan), Chia-Hung Chu (Taipei, Taiwan), Tzu Pei Chen (Hsinchu, Taiwan), Yuting Cheng (Hsinchu, Taiwan) and Sung-Li Wang (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor device with a nitrided capping layer and methods for forming the same. One method...