US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 25 for "Semiconductor device with fin isolation" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,051, issued on March 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device with fin isolation" was invented by Chang-Yin Chen (Taipei, Taiwan), Che-Cheng Chang (New Taipei, Taiwan) and Chih-Han Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor fin extending from a substrate, and a gate structure extending across the semiconductor fin. From a plan view, the semiconductor fin includes a first sidewall, a second sidewall opposing the first sidewall, an end surface extending along a different direction than the first sidewall and the sec...