US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 25 for "Semiconductor device structure with gate stack and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,203, issued on March 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure with gate stack and method for forming the same" was invented by Chien-Chih Lin (Taichung, Taiwan), Yun-Ju Pan (Taipei, Taiwan), Szu-Chi Yang (Hsinchu, Taiwan), Jhih-Yang Yan (Hsinchu County, Taiwan), Shih-Hao Lin (Hsinchu, Taiwan), Chung-Shu Wu (Taoyuan, Taiwan), Te-An Yu (Taipei, Taiwan) and Shih-Chiang Chen (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a substrate including a base and a fin structure ...