ALEXANDRIA, Va., March 26 -- United States Patent no. 12,257,602, issued on March 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device having microelectromechanical systems devices with improved cavity pressure uniformity" was invented by I-Hsuan Chiu (Taipei, Taiwan), Chia-Ming Hung (Taipei, Taiwan), Li-Chun Peng (Hsin-Chu, Taiwan) and Hsiang-Fu Chen (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect...