US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 25 for "Seed layer for ferroelectric memory device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,043, issued on March 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Seed layer for ferroelectric memory device and manufacturing method thereof" was invented by Chun-Chieh Lu (Taipei, Taiwan), Sai-Hooi Yeong (Hsinchu County, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes: forming a bottom electrode over a substrate; depositing a first seed layer over the bottom electrode, the first seed layer having an amorphous crystal phase; performing a first surface treatment on the first seed layer, wherein after the first surface treatment the first seed layer ...