ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,214, issued on March 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Multi-gate transistor structure" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to the present disclosure includes a first channel member including a first channel portion and a first connection portion, a second channel member including a second channel portion and a second connection portion, a gate structure disposed around the first channel portion and the second channel portion, and an inner spacer feature disposed between the first connection portion and...