US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 25 for "Method of fabricating magneto-resistive random access memory (MRAM)" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,642, issued on March 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of fabricating magneto-resistive random access memory (MRAM)" was invented by Chang-Lin Yang (Hsinchu, Taiwan), Chung-Te Lin (Hsinchu, Taiwan), Sheng-Yuan Chang (Hsinchu, Taiwan), Han-Ting Lin (Hsinchu, Taiwan) and Chien-Hua Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there ma...