ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,175, issued on March 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming integrated circuit" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Te-An Chen (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming an integrated circuit includes following operations. A substrate is received. The substrate includes a first region, a second region and an isolation structure. The isolation structure has a first top surface, a second top surface lower than the first top surface, and a boundary between the first top surface and the second top surface. A first device is form...