US Patent Issued to Taiwan Semiconductor Manufacturing on March 25 for "Metal-insulator-metal device capacitance enhancement" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,196, issued on March 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Metal-insulator-metal device capacitance enhancement" was invented by Lu-Sheng Chou (Tainan, Taiwan), Hsuan-Han Tseng (Tainan, Taiwan), Chun-Yuan Chen (Tainan, Taiwan), Hsiao-Hui Tseng (Tainan, Taiwan) and Ching-Chun Wang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present application provides an integrated chip (IC). The IC includes a metal-insulator-metal (MIM) device disposed over a substrate. The MIM device includes a plurality of conductive plates that are spaced from one another. The MIM device f...