US Patent Issued to Taiwan Semiconductor Manufacturing on March 25 for "Memory devices with improved bit line loading" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,903, issued on March 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory devices with improved bit line loading" was invented by Yi-Hsin Nien (Hsinchu, Taiwan), Hidehiro Fujiwara (Hsinchu, Taiwan), Chih-Yu Lin (Taichung, Taiwan) and Yen-Huei Chen (Jhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array is disclosed. The memory array includes a plurality of memory cells disposed over a substrate. Each of the memory cells is coupled to a corresponding one of a plurality of word lines and a corresponding one of a plurality of bit line pairs. First four of the memory cells that are c...