US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 25 for "Memory devices with backside boost capacitor and methods for forming the same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,928, issued on March 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory devices with backside boost capacitor and methods for forming the same" was invented by Nail Etkin Can Akkaya (Hsinchu, Taiwan), Mahmut Sinangil (Campbell, Calif.), Yih Wang (Hsinchu, Taiwan) and Jonathan Tsung-Yung Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a memory array formed on a front side of a substrate. The memory array is accessible through a plurality of bit lines. The memory device includes a switch transistor formed on the front side of the substrate. The switch transistor is op...