US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 25 for "Memory device with additional write bit lines" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,904, issued on March 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device with additional write bit lines" was invented by Hidehiro Fujiwara (Hsinchu, Taiwan), Chia-En Huang (Hsinchu, Taiwan), Yen-Huei Chen (Hsinchu, Taiwan), Jui-Che Tsai (Tainan, Taiwan) and Yih Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided. The memory device includes a plurality of memory cells arranged in a matrix of a plurality of rows and a plurality of columns. A first column of the plurality of columns of the matrix includes a first plurality of memory cells of the plurality o...