US Patent Issued to Taiwan Semiconductor Manufacturing on March 25 for "Forming low-stress silicon nitride layer through hydrogen treatment" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,036, issued on March 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Forming low-stress silicon nitride layer through hydrogen treatment" was invented by Wei-Che Hsieh (New Taipei, Taiwan), Ching Yu Huang (Hsinchu, Taiwan), Hsin-Hao Yeh (Taipei, Taiwan), Chunyao Wang (Zhubei, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamb...