US Patent Issued to Taiwan Semiconductor Manufacturing on March 25 for "Fin-end gate structures and method forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,213, issued on March 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin-end gate structures and method forming same" was invented by Shih-Yao Lin (New Taipei, Taiwan), Kuei-Yu Kao (Hsinchu, Taiwan), Chen-Ping Chen (Toucheng Township, Taiwan) and Chih-Han Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes simultaneously forming a first dummy gate stack and a second dummy gate stack on a first portion and a second portion of a protruding fin, simultaneously removing a first gate electrode of the first dummy gate stack and a second gate electrode of the second dummy gate stack to ...