US Patent Issued to Taiwan Semiconductor Manufacturing on March 25 for "Ferroelectric memory device" (Taiwanese Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,542, issued on March 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric memory device" was invented by Han-Jong Chia (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory device includes a first conductive region, a second conductive region and a ferroelectric structure. The second conductive region is disposed over the first conductive region. The ferroelectric structure includes a plurality of different ferroelectric materials stacked between the first conductive region and the second conductive region."

The patent was filed on July 23, 2023, under Application No. 18...