US Patent Issued to Taiwan Semiconductor Manufacturing on March 25 for "Diffusion barrier layer in top electrode to increase break down voltage" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,197, issued on March 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Diffusion barrier layer in top electrode to increase break down voltage" was invented by Hsing-Lien Lin (Hsin-Chu, Taiwan), Chii-Ming Wu (Taipei, Taiwan), Hai-Dang Trinh (Hsinchu, Taiwan) and Fa-Shen Jiang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a bottom electrode over a substrate. A dielectric layer is formed on the bottom electrode. A first top electrode layer is deposited on the dielec...