US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Write driver boost circuit for memory cells" (Canadian Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,918, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Write driver boost circuit for memory cells" was invented by Sanjeev Kumar Jain (Ottawa).

According to the abstract* released by the U.S. Patent & Trademark Office: "Circuits, systems, and methods are described herein for generating a boost voltage for a write operation of a memory cell. In one embodiment, a boost circuit includes a first inverter and a second inverter, each configured to invert a write signal. The boost circuit also includes a transistor and a capacitor. The transistor is coupled to an output of the first inverter. The transistor is configured to charge a ca...