US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Topology selective and sacrificial silicon nitride layer for generating spacers for a semiconductor device drain" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,240, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Topology selective and sacrificial silicon nitride layer for generating spacers for a semiconductor device drain" was invented by Tzu-Yang Ho (Hsinchu, Taiwan), Tsai-Jung Ho (Xihu Township, Taiwan), Jr-Hung Li (Chupei, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method may include forming a first silicon nitride layer in an opening of the semiconductor device and on a top surface of the semiconductor device, wherein the semiconductor device includes an epitaxial source/drain and a metal gate. The m...