US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Three-dimensional memory device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,550, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Three-dimensional memory device and method" was invented by Bo-Feng Young (Taipei, Taiwan), Meng-Han Lin (Hsinchu, Taiwan), Chih-Yu Chang (New Taipei, Taiwan), Sai-Hooi Yeong (Zhubei, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes patterning a first trench extending through a first conductive line, depositing a memory film along sidewalls and a bottom surface of the first trench, depositing a channel layer over the memory film, the channel layer extending along the sidewalls and the...