ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,103, issued on March 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure with backside via contact and a protection liner layer" was invented by Li-Zhen Yu (New Taipei, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan), Huan-Chieh Su (Changhua County, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes receiving a substrate having a front side and a back side, forming a shallow trench in the substrate from the front side, forming a lin...