ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,230, issued on March 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor structure and method for forming the same" was invented by Tsung-Lin Lee (Hsinchu, Taiwan), Choh-Fei Yeap (Hsinchu, Taiwan), Da-Wen Lin (Hsinchu, Taiwan) and Chih-Chieh Yeh (Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure is provided. The method includes forming a semiconductor fin structure including first semiconductor layers and second semiconductor layers alternatingly stacked, laterally recessing the first semiconductor layers of the semiconductor fin structure t...