ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,095, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor structure and manufacturing method thereof" was invented by Yu-Kai Lin (Changhua County, Taiwan), Su-Jen Sung (Hsinchu County, Taiwan), Tze-Liang Lee (Hsinchu, Taiwan) and Jen-Hung Wang (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure including a substrate, a first dielectric layer, a first conductive feature, an etch stop layer, a second dielectric layer and a second conductive feature is provided. The first dielectric layer is disposed over the substrate. The first conductive featur...