US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Semiconductor processing apparatus and method utilizing electrostatic discharge (ESD) prevention layer" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,091, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor processing apparatus and method utilizing electrostatic discharge (ESD) prevention layer" was invented by Tsai-Hao Hung (Hsinchu, Taiwan), Ping-Cheng Ko (Hsinchu, Taiwan), Tzu-Yang Lin (Hsinchu, Taiwan), Fang-Yu Liu (Hsinchu, Taiwan) and Cheng-Han Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or m...