US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 18 for "Semiconductor device with reduced contact resistance and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,096, issued on March 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device with reduced contact resistance and methods of forming the same" was invented by Kuo-Chiang Tsai (Hsinchu, Taiwan) and Jhy-Huei Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a substrate; a gate structure disposed over the substrate and over a channel region of the semiconductor device, wherein the gate structure includes a gate stack and spacers disposed along sidewalls of the gat...