ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,107, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method of manufacture" was invented by Yao-Wen Hsu (New Taipei, Taiwan), Ming-Chi Huang (Zhubei, Taiwan) and Ying-Liang Chuang (Zhubei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods which utilize a treatment process of a bottom anti-reflective layer are provided. The treatment process may be a physical treatment process in which material is added in order to fill holes and pores within the material of the bottom anti-reflective layer or else the treatment process may be a chemica...