ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,064, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method of forming the same" was invented by Chi-Chang Liu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes the following operations. A substrate is provided with a device and an insulating layer disposed over the device. A silicon-containing heterocyclic compound precursor and a first oxygen-containing compound precursor are introduced to the substrate, so as to form a zeroth dielectric layer on the insulating layer. A zeroth metal layer is formed in the ...