US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Self-aligned active regions and passivation layer and methods of making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,236, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Self-aligned active regions and passivation layer and methods of making the same" was invented by Hung Wei Li (Hsinchu, Taiwan), Mauricio Manfrini (Zhubei, Taiwan), Sai-Hooi Yeong (Zhubei, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Field effect transistors and method of making. The field effect transistor includes a pair of active regions over a channel layer, a channel region formed in the channel layer and located between the pair of active regions, and a pair of contact via structures electrically ...