US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 18 for "Selective etching method and semiconductor structure manufactured using the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,074, issued on March 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Selective etching method and semiconductor structure manufactured using the same" was invented by Kuan-Da Huang (Hsinchu, Taiwan), Chun-Fu Kuo (Hsinchu, Taiwan), Yi-Hsing Yu (Hsinchu, Taiwan) and Li-Te Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes forming a semiconductor portion which has an exposed region; forming two fin sidewalls which are disposed at two opposite sides of the exposed region of the semiconductor portion, and which include a dielectric mate...