ALEXANDRIA, Va., March 19 -- United States Patent no. 12,252,777, issued on March 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd. (Hsin-Chu, Taiwan).

"Physical vapor deposition (PVD) system and method of processing target" was invented by Sheng-Ying Wu (Taichung, Taiwan), Ming-Hsien Lin (Taichung, Taiwan), Po-Wei Wang (Taichung, Taiwan) and Hsiao-Feng Lu (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A physical vapor deposition (PVD) system is provided. The PVD system includes a PVD chamber defining a PVD volume within which a target material of a target is deposited onto a wafer. The PVD system includes the target in the PVD chamber. The target is configured to overlie ...