US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "One-time-programmable memory devices having first transistor, second transistor, and resistor in series" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,539, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"One-time-programmable memory devices having first transistor, second transistor, and resistor in series" was invented by Meng-Sheng Chang (Chu-bei, Taiwan) and Yao-Jen Yang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a plurality of memory cells, each of which includes a first transistor, a second transistor, and a resistor operatively coupled to each other in series. Each of the first and second transistors include a sub-transistor, the sub-transistor having a channel structure, a source struct...