US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Nonvolatile SRAM" (Taiwanese, American Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,923, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Nonvolatile SRAM" was invented by Perng-Fei Yuh (Walnut Creek, Calif.), Jui-Che Tsai (Tainan, Taiwan), Hiroki Noguchi (Hsinchu, Taiwan) and Yih Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device has a plurality of bit cells, each of which includes an SRAM cell having a storage node selectively connectable to a first bit line in response to a control signal received on a first word line. Each bit cell further includes an MRAM cell selectively connectable to the storage node of the SRAM cell in response to a contr...