US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 18 for "Methods of forming of inner spacer structure using semiconductor material with variable germanium concentration" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,102, issued on March 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Methods of forming of inner spacer structure using semiconductor material with variable germanium concentration" was invented by Che-Lun Chang (Hsinchu, Taiwan), Jiun-Ming Kuo (Taipei, Taiwan), Ji-Yin Tsai (Hsinchu County, Taiwan) and Yuan-Ching Peng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first layer is formed over a substrate; a second layer is formed over the first layer; and a third layer is formed over the second layer. The first and third layers each have a first semiconductor element; the second layer has a secon...