US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Method of manufacturing a FinFET with merged epitaxial source/drain regions" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,255, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of manufacturing a FinFET with merged epitaxial source/drain regions" was invented by Wei-Min Liu (Hsinchu, Taiwan), Li-Li Su (ChuBei, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first fin and a second fin extending from a substrate, the first fin including a first recess and the second fin including a second recess, an isolation region surrounding the first fin and surrounding the second fin, a gate stack over the first fin and the second fin, and a source/drain region in t...