US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 18 for "Method for forming semiconductor memory structure" (Taiwanese, American Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,551, issued on March 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming semiconductor memory structure" was invented by Nuo Xu (Milpitas, Calif.), Sai-Hooi Yeong (Hsinchu County, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Zhiqiang Wu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor memory structure includes following operations. A plurality of doped regions are formed in a semiconductor substrate. The doped regions are separated from each other. A stack including a plurality of first insulating layers and a plurality of second insulati...