US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Metal landing on top electrode of RRAM" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,652, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Metal landing on top electrode of RRAM" was invented by Chih-Yang Chang (Yuanlin Township, Taiwan) and Wen-Ting Chu (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to an integrated circuit including one or more memory cells arranged over a semiconductor substrate between an upper metal interconnect layer and a lower metal interconnect layer. A memory cell includes a bottom electrode disposed over the lower metal interconnect layer, a data storage or dielectric layer disposed over the bottom electrode, an...