US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Memory device and method of fabricating the same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,646, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and method of fabricating the same" was invented by Yen-Lin Huang (Menlo Park, Calif.), Ming-Yuan Song (Hsinchu, Taiwan), Chien-Min Lee (Hsinchu County, Taiwan), Nuo Xu (San Jose, Calif.) and Shy-Jay Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate, a spin-orbit torque (SOT) layer, a magnetic tunneling junction (MTJ) film stack, a connecting via and a shielding structure. The SOT layer is disposed on the substrate. The MTJ film stack is formed over SOT layer and on the ...