US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Memory device and method for forming thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,529, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and method for forming thereof" was invented by Chih-Chuan Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first memory cell and a dummy region adjacent to the first memory cell. The first memory cell includes a first transistor. The dummy region includes a cut-off transistor. The cut-off transistor has a first terminal electrically coupled to a second terminal of the first transistor. The cut-off transistor has a third terminal electrically coupled to ground."

The patent was ...