US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Memory device, semiconductor device, and method of fabricating semiconductor device" (Taiwanese, American Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,555, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device, semiconductor device, and method of fabricating semiconductor device" was invented by Carlos H. Diaz (Los Altos Hills, Calif.), Shy-Jay Lin (Hsinchu County, Taiwan) and Ming-Yuan Song (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a semiconductor substrate and an interconnect structure is provided. The semiconductor substrate includes a transistor, wherein the transistor has a source region and a drain region. The interconnect structure is disposed over the semiconductor substrate,...