US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Memory cell, method of forming the same, and semiconductor device having the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,654, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory cell, method of forming the same, and semiconductor device having the same" was invented by Yu-Chao Lin (Hsinchu, Taiwan) and Tung-Ying Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a memory cell and a method of forming the same. The memory cell includes a bottom electrode, a top electrode, and a storage element layer. The storage element layer is disposed between the bottom and top electrodes. An extending direction of a sidewall of the storage element layer is different from an extending direction of a...