US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Low-k feature formation processes and structures formed thereby" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,241, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Low-k feature formation processes and structures formed thereby" was invented by Wan-Yi Kao (Baoshan Township, Taiwan) and Chung-Chi Ko (Nantou, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relate to a method of forming a low-k dielectric material, for example, a low-k gate spacer layer in a FinFET device. The low-k dielectric material may be formed using a precursor having a general chemical structure comprising at least one carbon atom bonded between two silicon atoms. A target k-value of the diel...