ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,101, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Ion implantation of nanostructures for nano-FET" was invented by Yu-Chang Lin (Hsinchu, Taiwan), Chun-Feng Nieh (Hsinchu, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nanoFET transistor includes doped channel junctions at either end of a channel region for one or more nanosheets of the nanoFET transistor. The channel junctions are formed by a iterative recessing and implanting process which is performed as recesses are made for the source/drain regions. The implanted ...