ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,138, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interconnect structures of semiconductor device and methods of forming the same" was invented by Chia-Cheng Chou (Keelung, Taiwan), Chung-Chi Ko (Nantou, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming an interconnect structure includes the following steps. A first etching stop layer, a first dielectric layer, a second etching stop layer, an insert layer and a second dielectric layer are deposited over the second etching stop layer are deposited over a substrate. The second dielectric...