US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Inner spacer structures for gate-all-around field effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,249, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Inner spacer structures for gate-all-around field effect transistors" was invented by Mrunal Abhijith Khaderbad (Hsinchu, Taiwan), Keng-Chu Lin (Ping-Tung, Taiwan) and Yu-Yun Peng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure is directed to method for the fabrication of spacer structures between source/drain epitaxial structures and metal gate structures in nanostructure transistors. The method includes forming a fin structure with alternating first and second nanostructure elements on a substrate. The me...