US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Inner filler layer for multi-patterned metal gate for nanostructure transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,100, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Inner filler layer for multi-patterned metal gate for nanostructure transistor" was invented by Shahaji B. More (Hsinchu, Taiwan) and Chandrashekhar Prakash Savant (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a first nanostructure transistor and a second nanostructure transistor. When forming the integrated circuit, an inter-sheet fill layer is deposited between semiconductor nanostructures of the second nanostructure transistor. A first gate metal layer is deposited between semiconductor nanostr...