US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Image sensor with overlap of backside trench isolation structure and vertical transfer gate" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,219, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Image sensor with overlap of backside trench isolation structure and vertical transfer gate" was invented by Feng-Chi Hung (Chu-Bei, Taiwan), Dun-Nian Yaung (Taipei, Taiwan), Jen-Cheng Liu (Hsin-Chu, Taiwan), Wei Chuang Wu (Tainan, Taiwan), Yen-Yu Chen (Kaohsiung, Taiwan) and Chih-Kuan Yu (Nantou County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments are directed towards an image sensor device. A photodetector is disposed in a semiconductor substrate, and a transfer transistor is disposed over photodetector. The transfer ...